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| inchange semiconductor product specification silicon npn power transistors 2SC1785 description with to-3 package high power dissipation applications power amplifier applications power switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 6 v i c collector current 15 a i b base current 4 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC1785 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 200 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =10a; i b =1a 2.0 v v besat base-emitter saturation voltage i c =10a; i b =1a 2.5 v i cbo collector cut-off current v cb =200v; i e =0 100 a i ebo emitter cut-off current v eb =6v; i c =0 100 a h fe dc current gain i c =5a ; v ce =4v 20 inchange semiconductor product specification 3 silicon npn power transistors 2SC1785 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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